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SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-3000C14-8GVR 8GB

SK Hynix DDR2 800 2G 2GB vs G Skill Intl F4-3000C14-8GVR 8GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
G Skill Intl F4-3000C14-8GVR 8GB

G Skill Intl F4-3000C14-8GVR 8GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 18.2
    测试中的平均数值
G Skill Intl F4-3000C14-8GVR 8GB 需要考虑的原因
G Skill Intl F4-3000C14-8GVR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 77
    左右 -285% 更低的延时
  • 更快的写入速度，GB/s
    14.0 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-3000C14-8GVR 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 20
  • 读取速度，GB/s
    2,936.9 left arrow 18.2
  • 写入速度，GB/s
    1,884.0 left arrow 14.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    564 left arrow 3359

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

G Skill Intl F4-3000C14-8GVR 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-3000C14-8GVR 8GB
G Skill Intl F4-3000C14-8GVR 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Samsung M471A5644EB0-CPB 2GB
Samsung M471A5644EB0-CPB 2GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Transcend Information TS2GSH64V1B 16GB
Transcend Information TS2GSH64V1B 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Chun Well Technology Holding Limited D4U0836181B 8GB
Chun Well Technology Holding Limited D4U0836181B 8GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
SK Hynix HMA451S6AFR8N-TF 4GB
SK Hynix HMA451S6AFR8N-TF 4GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Corsair CMK8GX4M2A2400C14 4GB
Corsair CMK8GX4M2A2400C14 4GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston ACR21D4S15HAG/8G 8GB
Kingston ACR21D4S15HAG/8G 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Crucial Technology CT8G4DFS824A.M8FR 8GB
Crucial Technology CT8G4DFS824A.M8FR 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Crucial Technology BLS8G4D240FSC.16FBD2 8GB
Crucial Technology BLS8G4D240FSC.16FBD2 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston KF3600C18D4/16GX 16GB
Kingston KF3600C18D4/16GX 16GB
内存RAM
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
Kingston 9905700-017.A00G 8GB
Kingston 9905700-017.A00G 8GB
内存RAM
Kingston HX426C16FB2/8-SP 8GB
Kingston HX426C16FB2/8-SP 8GB
Kingston KHX21334D4/8G 8GB
Kingston KHX21334D4/8G 8GB
内存RAM