SK Hynix DDR2 800 2G 2GB vs Gloway International Co. Ltd. TYA4U2666D19081C 8GB

总分

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分

Gloway International Co. Ltd. TYA4U2666D19081C 8GB

Gloway International Co. Ltd. TYA4U2666D19081C 8GB

差异规格评论

差异

SK Hynix DDR2 800 2G 2GB

需要考虑的原因
SK Hynix DDR2 800 2G 2GB

报告一个错误

更快的读取速度，GB/s

2 13.5

测试中的平均数值

Gloway International Co. Ltd. TYA4U2666D19081C 8GB

需要考虑的原因
Gloway International Co. Ltd. TYA4U2666D19081C 8GB

报告一个错误

低于PassMark测试中的延时，ns

40 77

左右 -93% 更低的延时
更快的写入速度，GB/s

9.5 1,884.0

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

SK Hynix DDR2 800 2G 2GB

Gloway International Co. Ltd. TYA4U2666D19081C 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 40
读取速度，GB/s

2,936.9 13.5
写入速度，GB/s

1,884.0 9.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

564 2254

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

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Team Group Inc. ZEUS-2133 8GB

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Kingston 99P5471-002.A00LF 2GB

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Apacer Technology D12.2344DT.001 4GB

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G Skill Intl F4-4000C17-8GVKB 8GB

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Samsung 1600 CL10 Series 8GB

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Golden Empire CL15-15-15 D4-3000 8GB

Golden Empire CL15-15-15 D4-3000 8GB

Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Kingston 9965643-006.A01G 8GB

Kingston 9965643-006.A01G 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Corsair CMN32GX4M2Z3600C16 16GB

Corsair CMN32GX4M2Z3600C16 16GB