SK Hynix DDR2 800 2G 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

总分

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

差异规格评论

差异

SK Hynix DDR2 800 2G 2GB

需要考虑的原因
SK Hynix DDR2 800 2G 2GB

报告一个错误

更快的读取速度，GB/s

2 10

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 77

左右 -120% 更低的延时
更快的写入速度，GB/s

7.0 1,884.0

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix DDR2 800 2G 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 35
读取速度，GB/s

2,936.9 10.0
写入速度，GB/s

1,884.0 7.0
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

564 2068

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix DDR2 800 2G 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N

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Crucial Technology CT16G4SFD832A.M16FRS 16GB

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Samsung 1600 CL10 Series 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Transcend Information TS2GLH64V6B 16GB

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Asgard VMA42UH-MEC1U2AJ2 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

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Crucial Technology CT8G4SFD824A.M16FB 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

A-DATA Technology AD4S3200316G22-BHYD 16GB