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SK Hynix DDR2 800 2G 2GB
Kingmax Semiconductor GLAG42F-18---------- 8GB

SK Hynix DDR2 800 2G 2GB vs Kingmax Semiconductor GLAG42F-18---------- 8GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
Kingmax Semiconductor GLAG42F-18---------- 8GB

Kingmax Semiconductor GLAG42F-18---------- 8GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 14.5
    测试中的平均数值
Kingmax Semiconductor GLAG42F-18---------- 8GB 需要考虑的原因
Kingmax Semiconductor GLAG42F-18---------- 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 77
    左右 -185% 更低的延时
  • 更快的写入速度，GB/s
    7.4 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 27
  • 读取速度，GB/s
    2,936.9 left arrow 14.5
  • 写入速度，GB/s
    1,884.0 left arrow 7.4
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    564 left arrow 2356

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

Kingmax Semiconductor GLAG42F-18---------- 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
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G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
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Apacer Technology GD2.1527WH.002 8GB
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PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Maxsun MSD48G26Q3 8GB
Maxsun MSD48G26Q3 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C
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Samsung M378B5173QH0-CK0 4GB
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Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
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Samsung M378A2K43CB1-CTD 16GB
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Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
Wilk Elektronik S.A. IRX3000D464L16S/8G 8GB
Wilk Elektronik S.A. IRX3000D464L16S/8G 8GB
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TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3466C16-16GTZR 16GB
G Skill Intl F4-3466C16-16GTZR 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-4400C18-8GTRS 8GB
G Skill Intl F4-4400C18-8GTRS 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
G Skill Intl F4-3600C17-16GTZSW 16GB
G Skill Intl F4-3600C17-16GTZSW 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMA41GU6MFR8N-TF 8GB
SK Hynix HMA41GU6MFR8N-TF 8GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Crucial Technology BLS4G4D240FSC.8FARG 4GB
Crucial Technology BLS4G4D240FSC.8FARG 4GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Kingston ASU21D4U5S8MB-8 8GB
Kingston ASU21D4U5S8MB-8 8GB
内存RAM
Corsair VS2GB1333D4 2GB
Corsair VS2GB1333D4 2GB
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Crucial Technology CT16G4SFD824A.C16FJ 16GB
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Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Samsung M471A5143EB0-CPB 4GB
Samsung M471A5143EB0-CPB 4GB
内存RAM