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SK Hynix DDR2 800 2G 2GB
Kingston 9965662-002.A01G 16GB

SK Hynix DDR2 800 2G 2GB vs Kingston 9965662-002.A01G 16GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
Kingston 9965662-002.A01G 16GB

Kingston 9965662-002.A01G 16GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
Kingston 9965662-002.A01G 16GB 需要考虑的原因
Kingston 9965662-002.A01G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 77
    左右 -126% 更低的延时
  • 更快的读取速度，GB/s
    8.6 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.3 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
Kingston 9965662-002.A01G 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 34
  • 读取速度，GB/s
    2,936.9 left arrow 8.6
  • 写入速度，GB/s
    1,884.0 left arrow 8.3
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    564 left arrow 2079

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

Kingston 9965662-002.A01G 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Kingston 9965662-002.A01G 16GB
Kingston 9965662-002.A01G 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-2666C15-4GRR 4GB
G Skill Intl F4-2666C15-4GRR 4GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston CAC24D4S7D8MB-16 16GB
Kingston CAC24D4S7D8MB-16 16GB
内存RAM
Nanya Technology M2Y51264TU88A2B-3C 512MB
Nanya Technology M2Y51264TU88A2B-3C 512MB
Kingston 8ATF1G64HZ-2G3B2 8GB
Kingston 8ATF1G64HZ-2G3B2 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Zotac Technology Ltd OD48G32S816-ZHC 8GB
Zotac Technology Ltd OD48G32S816-ZHC 8GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
G Skill Intl F4-3600C16-16GTRSC 16GB
G Skill Intl F4-3600C16-16GTRSC 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
内存RAM
PUSKILL PJ16TFK1GM8 16GB
PUSKILL PJ16TFK1GM8 16GB
Crucial Technology CT32G48C40U5.M16A1 32GB
Crucial Technology CT32G48C40U5.M16A1 32GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Apacer Technology D12.2356WS.001 8GB
Apacer Technology D12.2356WS.001 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 99U5704-001.A00G 4GB
Kingston 99U5704-001.A00G 4GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Gloway International (HK) STKD4GAM2400-F 8GB
Gloway International (HK) STKD4GAM2400-F 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology CT16G4DFD824A.C16FHD 16GB
Crucial Technology CT16G4DFD824A.C16FHD 16GB
内存RAM