Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Chun Well Technology Holding Limited MD4U0840180BCW 8GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 26

左右 8% 更低的延时

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

需要考虑的原因
Chun Well Technology Holding Limited MD4U0840180BCW 8GB

报告一个错误

更快的读取速度，GB/s

18.2 16

测试中的平均数值
更快的写入速度，GB/s

17.3 12.5

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 26
读取速度，GB/s

16.0 18.2
写入速度，GB/s

12.5 17.3
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2925 3938

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

Corsair CMU16GX4M2C3200C16 8GB

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Kingston KF560C40-16 16GB

Kingston KF560C40-16 16GB

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Kingston M378A1K43CB2-CRC 8GB

Kingston M378A1K43CB2-CRC 8GB