SK Hynix DDR2 800 2G 2GB vs Kingston X0N6VG-HYD2 16GB

总分

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分

Kingston X0N6VG-HYD2 16GB

Kingston X0N6VG-HYD2 16GB

差异规格评论

差异

SK Hynix DDR2 800 2G 2GB

需要考虑的原因
SK Hynix DDR2 800 2G 2GB

报告一个错误

更快的读取速度，GB/s

2 17.3

测试中的平均数值

Kingston X0N6VG-HYD2 16GB

需要考虑的原因
Kingston X0N6VG-HYD2 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 77

左右 -157% 更低的延时
更快的写入速度，GB/s

16.1 1,884.0

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

SK Hynix DDR2 800 2G 2GB

Kingston X0N6VG-HYD2 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 30
读取速度，GB/s

2,936.9 17.3
写入速度，GB/s

1,884.0 16.1
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

564 3637

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Samsung M378A1G43DB0-CPB 8GB

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Smart Modular SF4641G8CK8IEHLSBG 8GB

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Crucial Technology CB16GS2666.C8ET 16GB

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Kingston 99U5474-010.A00LF 2GB

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Ramaxel Technology RMSA3270ME86H9F-2666 4GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Avant Technology W641GU42J7240NB 8GB

Avant Technology W641GU42J7240NB 8GB

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Samsung M386A4K40BB0-CRC 32GB

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PNY Electronics PNY 2GB

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Kingston 9905701-098.A00G 16GB

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

Teikon TMA81GS6CJR8N-VKSC 8GB

Teikon TMA81GS6CJR8N-VKSC 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Kingston KHX3000C15D4/8GX 8GB

Kingston KHX3000C15D4/8GX 8GB