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SK Hynix DDR2 800 2G 2GB
Micron Technology 36ASF4G72PZ-2G3D1 32GB

SK Hynix DDR2 800 2G 2GB vs Micron Technology 36ASF4G72PZ-2G3D1 32GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
Micron Technology 36ASF4G72PZ-2G3D1 32GB

Micron Technology 36ASF4G72PZ-2G3D1 32GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 10.6
    测试中的平均数值
Micron Technology 36ASF4G72PZ-2G3D1 32GB 需要考虑的原因
Micron Technology 36ASF4G72PZ-2G3D1 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 77
    左右 -126% 更低的延时
  • 更快的写入速度，GB/s
    8.1 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
Micron Technology 36ASF4G72PZ-2G3D1 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 34
  • 读取速度，GB/s
    2,936.9 left arrow 10.6
  • 写入速度，GB/s
    1,884.0 left arrow 8.1
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    564 left arrow 2237

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

Micron Technology 36ASF4G72PZ-2G3D1 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston 9965525-144.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Samsung M471A1K1KBB0-CPB 8GB
Samsung M471A1K1KBB0-CPB 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology BLS4G4D240FSA.M8FADG 4GB
Crucial Technology BLS4G4D240FSA.M8FADG 4GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Corsair CMT32GX4M4K3600C16 8GB
Corsair CMT32GX4M4K3600C16 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Kingston XW21KG-MIE2 8GB
Kingston XW21KG-MIE2 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
V-Color Technology Inc. TA48G32S816SK 8GB
V-Color Technology Inc. TA48G32S816SK 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Asgard VMA41UH-MEC1U2AW1 16GB
Asgard VMA41UH-MEC1U2AW1 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3200C16-8GVKB 8GB
G Skill Intl F4-3200C16-8GVKB 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Asgard VMA45UH-MEC1U2AW2 16GB
Asgard VMA45UH-MEC1U2AW2 16GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
内存RAM