SK Hynix DDR2 800 2G 2GB vs Samsung M391A2K43BB1-CTD 16GB

总分

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分

Samsung M391A2K43BB1-CTD 16GB

Samsung M391A2K43BB1-CTD 16GB

差异规格评论

差异

SK Hynix DDR2 800 2G 2GB

需要考虑的原因
SK Hynix DDR2 800 2G 2GB

报告一个错误

更快的读取速度，GB/s

2 16.8

测试中的平均数值

Samsung M391A2K43BB1-CTD 16GB

需要考虑的原因
Samsung M391A2K43BB1-CTD 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 77

左右 -221% 更低的延时
更快的写入速度，GB/s

14.9 1,884.0

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

SK Hynix DDR2 800 2G 2GB

Samsung M391A2K43BB1-CTD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 24
读取速度，GB/s

2,936.9 16.8
写入速度，GB/s

1,884.0 14.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

564 3167

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Elpida EBJ40EG8BFWB-JS-F 4GB

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G Skill Intl F4-2400C17-8GDBVR 8GB

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Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Kingston 99P5474-050.A00LF 4GB

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Kingston KHX1866C10D3/8GX 8GB

Crucial Technology BLE4G4D32AEEA.K8FD 4GB

Crucial Technology BLE4G4D32AEEA.K8FD 4GB