SK Hynix DDR2 800 2G 2GB vs SK Hynix HMA82GS6JJR8N-VK 16GB

总分

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分

SK Hynix HMA82GS6JJR8N-VK 16GB

SK Hynix HMA82GS6JJR8N-VK 16GB

差异规格评论

差异

SK Hynix DDR2 800 2G 2GB

需要考虑的原因
SK Hynix DDR2 800 2G 2GB

报告一个错误

更快的读取速度，GB/s

2 15.1

测试中的平均数值

SK Hynix HMA82GS6JJR8N-VK 16GB

需要考虑的原因
SK Hynix HMA82GS6JJR8N-VK 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 77

左右 -114% 更低的延时
更快的写入速度，GB/s

11.5 1,884.0

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

SK Hynix DDR2 800 2G 2GB

SK Hynix HMA82GS6JJR8N-VK 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 36
读取速度，GB/s

2,936.9 15.1
写入速度，GB/s

1,884.0 11.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

564 2814

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M386B4G70DM0-CMA4 32GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

Gold Key Technology Co Ltd GKE160SO102408-3200 16GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Team Group Inc. Team-Elite-1333 4GB

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Crucial Technology CT16G4SFD824A.M16FD1 16GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

Kingston 9905625-152.A00G 16GB

Kingston 9905625-152.A00G 16GB