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SK Hynix DDR2 800 2G 2GB
SK Hynix HMA851U6DJR6N-XN 4GB

SK Hynix DDR2 800 2G 2GB vs SK Hynix HMA851U6DJR6N-XN 4GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
SK Hynix HMA851U6DJR6N-XN 4GB

SK Hynix HMA851U6DJR6N-XN 4GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15.9
    测试中的平均数值
SK Hynix HMA851U6DJR6N-XN 4GB 需要考虑的原因
SK Hynix HMA851U6DJR6N-XN 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 77
    左右 -141% 更低的延时
  • 更快的写入速度，GB/s
    10.6 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
SK Hynix HMA851U6DJR6N-XN 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 32
  • 读取速度，GB/s
    2,936.9 left arrow 15.9
  • 写入速度，GB/s
    1,884.0 left arrow 10.6
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    564 left arrow 2240

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

SK Hynix HMA851U6DJR6N-XN 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix GKE160SO102408-3000 16GB
SK Hynix GKE160SO102408-3000 16GB
Crucial Technology CT32G48C40U5.M16A1 32GB
Crucial Technology CT32G48C40U5.M16A1 32GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix HMA81GU7AFR8N-UH 8GB
SK Hynix HMA81GU7AFR8N-UH 8GB
内存RAM
Samsung M378B5273EB0-CK0 4GB
Samsung M378B5273EB0-CK0 4GB
Corsair CMK16GX4M2B3466C16 8GB
Corsair CMK16GX4M2B3466C16 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Kingston XG9XKG-MIE 16GB
Kingston XG9XKG-MIE 16GB
内存RAM
Samsung M378B5273EB0-CK0 4GB
Samsung M378B5273EB0-CK0 4GB
Corsair CMW16GX4M2Z3600C18 8GB
Corsair CMW16GX4M2Z3600C18 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology CT8G4SFS8213.C8FH1 8GB
Crucial Technology CT8G4SFS8213.C8FH1 8GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Crucial Technology CT8G4SFS824A.C8FDD1 8GB
Crucial Technology CT8G4SFS824A.C8FDD1 8GB
内存RAM
TwinMOS 9DNPBNZB-TATP 4GB
TwinMOS 9DNPBNZB-TATP 4GB
Samsung M471A5143DB0-CPB 4GB
Samsung M471A5143DB0-CPB 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
内存RAM
G Skill Intl F3-17000CL9-4GBXLD 4GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
Micron Technology M471A1K43BB1-CRC 8GB
Micron Technology M471A1K43BB1-CRC 8GB
内存RAM
Samsung M378B5273EB0-CK0 4GB
Samsung M378B5273EB0-CK0 4GB
Mushkin 99[2/7/4]199F 8GB
Mushkin 99[2/7/4]199F 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
内存RAM