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SK Hynix DDR2 800 2G 2GB
V-Color Technology Inc. TA48G30S815GK 8GB

SK Hynix DDR2 800 2G 2GB vs V-Color Technology Inc. TA48G30S815GK 8GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
V-Color Technology Inc. TA48G30S815GK 8GB

V-Color Technology Inc. TA48G30S815GK 8GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
V-Color Technology Inc. TA48G30S815GK 8GB 需要考虑的原因
V-Color Technology Inc. TA48G30S815GK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 77
    左右 -353% 更低的延时
  • 更快的读取速度，GB/s
    21.8 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.6 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
V-Color Technology Inc. TA48G30S815GK 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 17
  • 读取速度，GB/s
    2,936.9 left arrow 21.8
  • 写入速度，GB/s
    1,884.0 left arrow 16.6
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    564 left arrow 3695

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

V-Color Technology Inc. TA48G30S815GK 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
V-Color Technology Inc. TA48G30S815GK 8GB
V-Color Technology Inc. TA48G30S815GK 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
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Samsung M378B5773DH0-CH9 2GB
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G Skill Intl F4-3600C16-8GTZKK 8GB
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Crucial Technology BL32G32C16U4BL.M16FB 32GB
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Crucial Technology CT25664AA800.M16FG 2GB
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Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
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Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
内存RAM
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Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology BLS8G4D240FSB.16FBD 8GB
Crucial Technology BLS8G4D240FSB.16FBD 8GB
内存RAM
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Kreton Corporation 51624xxxx68x35xxxx 2GB
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内存RAM
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内存RAM
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Samsung M393A1G40DB0-CPB 8GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
内存RAM
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A-DATA Technology AM2L16BC4R1-B0AS 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
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