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SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-3400C16-8GTZSW 8GB

SK Hynix HMA451U6AFR8N-TF 4GB vs G Skill Intl F4-3400C16-8GTZSW 8GB

总分
star star star star star
SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

总分
star star star star star
G Skill Intl F4-3400C16-8GTZSW 8GB

G Skill Intl F4-3400C16-8GTZSW 8GB

差异 规格 评论

差异

SK Hynix HMA451U6AFR8N-TF 4GB 需要考虑的原因
SK Hynix HMA451U6AFR8N-TF 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.7 left arrow 10.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.6 left arrow 8.3
    测试中的平均数值
G Skill Intl F4-3400C16-8GTZSW 8GB 需要考虑的原因
G Skill Intl F4-3400C16-8GTZSW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 37
    左右 -16% 更低的延时

规格

完整的技术规格清单
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-3400C16-8GTZSW 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 32
  • 读取速度，GB/s
    14.7 left arrow 10.9
  • 写入速度，GB/s
    10.6 left arrow 8.3
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2438 left arrow 2370

SK Hynix HMA451U6AFR8N-TF 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3400C16-8GTZSW 8GB RAM的比较

Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-3400C16-8GTZSW 8GB
G Skill Intl F4-3400C16-8GTZSW 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
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内存RAM
Kingston 9905403-011.A03LF 2GB
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内存RAM
SpecTek Incorporated PSD34G13332 4GB
SpecTek Incorporated PSD34G13332 4GB
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内存RAM
Kingston 99U5584-001.A00LF 4GB
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内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
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Corsair CMW128GX4M4D3600C18 32GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
SK Hynix HMA81GS6CJR8N-VK 8GB
SK Hynix HMA81GS6CJR8N-VK 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
EVGA 8GX-D4-3000-MR 8GB
EVGA 8GX-D4-3000-MR 8GB
内存RAM
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SK Hynix HMT451S6DFR8A-PB 4GB
Samsung M378A5244CB0-CVF 4GB
Samsung M378A5244CB0-CVF 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
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Crucial Technology CT8G4SFS632A 8GB
内存RAM
Crucial Technology CT51264BA160B.C16F 4GB
Crucial Technology CT51264BA160B.C16F 4GB
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内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
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内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
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Corsair CM4X8GF2666C18S2 8GB
内存RAM