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SK Hynix HMT451S6DFR8A-PB 4GB
Samsung M378A5244CB0-CVF 4GB

SK Hynix HMT451S6DFR8A-PB 4GB vs Samsung M378A5244CB0-CVF 4GB

总分
star star star star star
SK Hynix HMT451S6DFR8A-PB 4GB

SK Hynix HMT451S6DFR8A-PB 4GB

总分
star star star star star
Samsung M378A5244CB0-CVF 4GB

Samsung M378A5244CB0-CVF 4GB

差异 规格 评论

差异

SK Hynix HMT451S6DFR8A-PB 4GB 需要考虑的原因
SK Hynix HMT451S6DFR8A-PB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 30
    左右 3% 更低的延时
Samsung M378A5244CB0-CVF 4GB 需要考虑的原因
Samsung M378A5244CB0-CVF 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16 left arrow 11.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    23400 left arrow 12800
    左右 1.83 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT451S6DFR8A-PB 4GB
Samsung M378A5244CB0-CVF 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 30
  • 读取速度，GB/s
    11.3 left arrow 16.0
  • 写入速度，GB/s
    5.9 left arrow 12.3
  • 内存带宽，mbps
    12800 left arrow 23400
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • 排名PassMark (越多越好)
    1605 left arrow 2709

SK Hynix HMT451S6DFR8A-PB 4GB RAM的比较

Samsung M471B5173EB0-YK0 4GB
Essencore Limited IM48GU88N26-GIIHMB 8GB

Samsung M378A5244CB0-CVF 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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Ramos Technology RMB4GB58BCA3-13HC 4GB
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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内存RAM
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内存RAM
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Kingston KMKYF9-MID 8GB
内存RAM
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内存RAM
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内存RAM
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Ramaxel Technology RMSA3260ME78HAF-2666 8GB
内存RAM
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Samsung M3 93T5750CZA-CE6 2GB
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Corsair CM4B16G7L2666A16K2-O 16GB
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