SK Hynix HMA451U6AFR8N-TF 4GB vs Micron Technology 8ATF1G64AZ-2G1B1 8GB

总分

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

总分

Micron Technology 8ATF1G64AZ-2G1B1 8GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB

差异规格评论

差异

SK Hynix HMA451U6AFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451U6AFR8N-TF 4GB

报告一个错误

Micron Technology 8ATF1G64AZ-2G1B1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-2G1B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 37

左右 -16% 更低的延时
更快的读取速度，GB/s

15.5 14.7

测试中的平均数值
更快的写入速度，GB/s

11.8 10.6

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMA451U6AFR8N-TF 4GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

37 32
读取速度，GB/s

14.7 15.5
写入速度，GB/s

10.6 11.8
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2438 2960

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M391B5673EH1-CH9 2GB

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Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

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G Skill Intl F4-4266C19-8GTZSW 8GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Corsair CMK32GX4M2L3000C15 16GB

Corsair CMK32GX4M2L3000C15 16GB

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Samsung M393B1G70BH0-YK0 8GB

Apacer Technology 78.B1GN3.AZ32B 4GB

Apacer Technology 78.B1GN3.AZ32B 4GB

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Unifosa Corporation HU564404EP0200 4GB

Kingston KHX2666C13D4/4GX 4GB

Kingston KHX2666C13D4/4GX 4GB