SK Hynix HMA451U6AFR8N-TF 4GB vs Samsung M471A1K43DB1-CWE 8GB

总分

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

总分

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

差异规格评论

差异

SK Hynix HMA451U6AFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451U6AFR8N-TF 4GB

报告一个错误

Samsung M471A1K43DB1-CWE 8GB

需要考虑的原因
Samsung M471A1K43DB1-CWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 37

左右 -12% 更低的延时
更快的读取速度，GB/s

16.1 14.7

测试中的平均数值
更快的写入速度，GB/s

13.0 10.6

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51 更高的带宽

规格

完整的技术规格清单

SK Hynix HMA451U6AFR8N-TF 4GB

Samsung M471A1K43DB1-CWE 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

37 33
读取速度，GB/s

14.7 16.1
写入速度，GB/s

10.6 13.0
内存带宽，mbps

17000 25600

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2438 2987

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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Ramaxel Technology RMT3160ED58E9W1600 4GB

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Transcend Information TS512MSH64V4H 4GB

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Nanya Technology NT4GC64C88B1NS-DI 4GB

Nanya Technology NT4GC64C88B1NS-DI 4GB

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Crucial Technology BLM8G44C19U4B.M8FE1 8GB

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A-DATA Technology ADOVE1A0834E 1GB

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V-Color Technology Inc. TL48G24S815RGB 8GB