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SK Hynix HMA81GU6DJR8N-XN 8GB
Crucial Technology BL16G26C16U4B.16FD 16GB

SK Hynix HMA81GU6DJR8N-XN 8GB vs Crucial Technology BL16G26C16U4B.16FD 16GB

总分
star star star star star
SK Hynix HMA81GU6DJR8N-XN 8GB

SK Hynix HMA81GU6DJR8N-XN 8GB

总分
star star star star star
Crucial Technology BL16G26C16U4B.16FD 16GB

Crucial Technology BL16G26C16U4B.16FD 16GB

差异 规格 评论

差异

SK Hynix HMA81GU6DJR8N-XN 8GB 需要考虑的原因
SK Hynix HMA81GU6DJR8N-XN 8GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
Crucial Technology BL16G26C16U4B.16FD 16GB 需要考虑的原因
Crucial Technology BL16G26C16U4B.16FD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 31
    左右 -3% 更低的延时
  • 更快的写入速度，GB/s
    14.5 left arrow 12.9
    测试中的平均数值

规格

完整的技术规格清单
SK Hynix HMA81GU6DJR8N-XN 8GB
Crucial Technology BL16G26C16U4B.16FD 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    31 left arrow 30
  • 读取速度，GB/s
    17.2 left arrow 17.2
  • 写入速度，GB/s
    12.9 left arrow 14.5
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3100 left arrow 3505

SK Hynix HMA81GU6DJR8N-XN 8GB RAM的比较

Kingston KF2933C17S4/16G 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BL16G26C16U4B.16FD 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Corsair CMZ16GX3M2A2400C10 8GB
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内存RAM
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Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Samsung M378B5773DH0-CH9 2GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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