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SK Hynix HMP125U6EFR8C-S6 2GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

SK Hynix HMP125U6EFR8C-S6 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

总分
star star star star star
SK Hynix HMP125U6EFR8C-S6 2GB

SK Hynix HMP125U6EFR8C-S6 2GB

总分
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

差异 规格 评论

差异

SK Hynix HMP125U6EFR8C-S6 2GB 需要考虑的原因
SK Hynix HMP125U6EFR8C-S6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 12.5
    测试中的平均数值
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB 需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 61
    左右 -97% 更低的延时
  • 更快的写入速度，GB/s
    9.4 left arrow 2,042.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
SK Hynix HMP125U6EFR8C-S6 2GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    61 left arrow 31
  • 读取速度，GB/s
    4,448.3 left arrow 12.5
  • 写入速度，GB/s
    2,042.4 left arrow 9.4
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    860 left arrow 2361

SK Hynix HMP125U6EFR8C-S6 2GB RAM的比较

Kingston KVR800D2N6/2G 2GB
Mushkin MR[A/B]4U300JJJM8G 8GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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