SK Hynix HMT151R7TFR4C-H9 4GB vs Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

总分

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

总分

Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

差异规格评论

差异

SK Hynix HMT151R7TFR4C-H9 4GB

需要考虑的原因
SK Hynix HMT151R7TFR4C-H9 4GB

报告一个错误

Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

需要考虑的原因
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

报告一个错误

低于PassMark测试中的延时，ns

26 48

左右 -85% 更低的延时
更快的读取速度，GB/s

16.9 10.1

测试中的平均数值
更快的写入速度，GB/s

14.5 7.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT151R7TFR4C-H9 4GB

Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 26
读取速度，GB/s

10.1 16.9
写入速度，GB/s

7.0 14.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1955 3204

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

G Skill Intl F4-3000C16-16GTZN 16GB

G Skill Intl F4-3000C16-16GTZN 16GB

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-3600C14-16GVKA 16GB

G Skill Intl F4-3600C14-16GVKA 16GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Micron Technology TEAMGROUP-UD4-3000 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Kingston KF2666C15S4/8G 8GB

Kingston KF2666C15S4/8G 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Micron Technology 9ASF1G72PZ-2G3B1 8GB

Micron Technology 9ASF1G72PZ-2G3B1 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Team Group Inc. TEAMGROUP-UD4-2400 8GB

Team Group Inc. TEAMGROUP-UD4-2400 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

InnoDisk Corporation 16GB

InnoDisk Corporation 16GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905625-096.A00G 16GB

Kingston 9905625-096.A00G 16GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Micron Technology M471A1K43CB1-CTD 8GB

Micron Technology M471A1K43CB1-CTD 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-2400C16-16GFT 16GB

G Skill Intl F4-2400C16-16GFT 16GB