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SK Hynix HMT151R7TFR4C-H9 4GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
比较
SK Hynix HMT151R7TFR4C-H9 4GB vs InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
总分
SK Hynix HMT151R7TFR4C-H9 4GB
总分
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT151R7TFR4C-H9 4GB
报告一个错误
需要考虑的原因
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
报告一个错误
低于PassMark测试中的延时,ns
22
48
左右 -118% 更低的延时
更快的读取速度,GB/s
17.2
10.1
测试中的平均数值
更快的写入速度,GB/s
13.0
7.0
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT151R7TFR4C-H9 4GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
48
22
读取速度,GB/s
10.1
17.2
写入速度,GB/s
7.0
13.0
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1955
3007
SK Hynix HMT151R7TFR4C-H9 4GB RAM的比较
SK Hynix HMT151R7BFR4C-H9 4GB
Crucial Technology BLS4G4D240FSB.8FARG? 4GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston XN205T-MIE 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Apacer Technology 78.DAGQ7.40B0B 16GB
SK Hynix HYMP112U64CP8-S6 1GB
Samsung M471A2K43CB1-CRCR 16GB
Kingston 99U5474-037.A00LF 4GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-4400C18-8GTRG 8GB
Kingston 99U5474-010.A00LF 2GB
Samsung M378A2K43BB1-CPB 16GB
Mushkin 991988 (996988) 4GB
Crucial Technology BL8G36C16U4R.M8FE1 8GB
报告一个错误
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Bug description
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