SK Hynix HMT151R7TFR4C-H9 4GB vs Micron Technology 18ASF1G72PDZ-2G6B1 8GB

总分

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

总分

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

差异规格评论

差异

SK Hynix HMT151R7TFR4C-H9 4GB

需要考虑的原因
SK Hynix HMT151R7TFR4C-H9 4GB

报告一个错误

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G6B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 48

左右 -60% 更低的延时
更快的读取速度，GB/s

11.2 10.1

测试中的平均数值
更快的写入速度，GB/s

7.9 7.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT151R7TFR4C-H9 4GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 30
读取速度，GB/s

10.1 11.2
写入速度，GB/s

7.0 7.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1955 2266

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMZ16GX3M2A2400C10 8GB

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Panram International Corporation W4U2400PS-4G 4GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Kingston CBD24D4S7D8MA-16 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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G Skill Intl F4-3200C16-16GTZ 16GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Micron Technology 18ASF1G72PDZ-2G6B1 8GB

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Samsung M393B2G70BH0-CK0 16GB

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Crucial Technology CT4G4DFS8213.C8FHP 4GB

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Crucial Technology BLS8G4D26BFSE.16FBD2 8GB

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Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Hyundai Inc GR26C16S8K2HU416 8GB

Hyundai Inc GR26C16S8K2HU416 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 8ATF1G64AZ-2G6J1 8GB

Micron Technology 8ATF1G64AZ-2G6J1 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT8G4SFRA32A.C8FE 8GB

Crucial Technology CT8G4SFRA32A.C8FE 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMA84GL7MMR4N-TF 32GB

SK Hynix HMA84GL7MMR4N-TF 32GB

Samsung M378B1G73QH0-CK0 8GB

Samsung M378B1G73QH0-CK0 8GB

Crucial Technology BLM8G40C18U4B.M8FE1 8GB

Crucial Technology BLM8G40C18U4B.M8FE1 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB