SK Hynix HMT31GR7CFR4C-PB 8GB vs Samsung V-GeN D4S8GL26A8TL5 8GB

总分

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

总分

Samsung V-GeN D4S8GL26A8TL5 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB

差异规格评论

差异

SK Hynix HMT31GR7CFR4C-PB 8GB

需要考虑的原因
SK Hynix HMT31GR7CFR4C-PB 8GB

报告一个错误

Samsung V-GeN D4S8GL26A8TL5 8GB

需要考虑的原因
Samsung V-GeN D4S8GL26A8TL5 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 51

左右 -132% 更低的延时
更快的读取速度，GB/s

18 9.8

测试中的平均数值
更快的写入速度，GB/s

12.8 8.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT31GR7CFR4C-PB 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 22
读取速度，GB/s

9.8 18.0
写入速度，GB/s

8.2 12.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2182 3110

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471B5173DB0-YK0 4GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9905622-051.A00G 8GB

Kingston 9905622-051.A00G 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-4000C18-32GTRS 32GB

G Skill Intl F4-4000C18-32GTRS 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston KF3200C20S4/16GX 16GB

Kingston KF3200C20S4/16GX 16GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology BLS8G4D240FSE.16FBD2 8GB

Crucial Technology BLS8G4D240FSE.16FBD2 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Corsair CMK64GX4M2E3200C16 32GB

Corsair CMK64GX4M2E3200C16 32GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 1

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F4-3600C17-8GTRS 8GB

G Skill Intl F4-3600C17-8GTRS 8GB

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

Crucial Technology BLT16G4D30BET4.C16FD 16GB

Crucial Technology BLT16G4D30BET4.C16FD 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Micron Technology 36ASF2G72PZ-2G4AT 16GB

Micron Technology 36ASF2G72PZ-2G4AT 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

G Skill Intl F4-4400C18-8GTRS 8GB

G Skill Intl F4-4400C18-8GTRS 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Micron Technology 8ATF1G64HZ-2G3A1 8GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB