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SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CB8GS2666.C8ET 8GB

SK Hynix HMT325S6BFR8C-H9 2GB vs Crucial Technology CB8GS2666.C8ET 8GB

总分
star star star star star
SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分
star star star star star
Crucial Technology CB8GS2666.C8ET 8GB

Crucial Technology CB8GS2666.C8ET 8GB

差异 规格 评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB 需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB
报告一个错误
Crucial Technology CB8GS2666.C8ET 8GB 需要考虑的原因
Crucial Technology CB8GS2666.C8ET 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 41
    左右 -5% 更低的延时
  • 更快的读取速度，GB/s
    14 left arrow 11.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.1 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CB8GS2666.C8ET 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 39
  • 读取速度，GB/s
    11.6 left arrow 14.0
  • 写入速度，GB/s
    7.3 left arrow 9.1
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1438 left arrow 2221

SK Hynix HMT325S6BFR8C-H9 2GB RAM的比较

Elpida EBJ21UE8BDS0-DJ-F 2GB
Kingston 99U5469-041.A00LF 4GB

Crucial Technology CB8GS2666.C8ET 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CB8GS2666.C8ET 8GB
Crucial Technology CB8GS2666.C8ET 8GB
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Samsung M3 78T2863QZS-CF7 1GB
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内存RAM
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内存RAM
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Corsair CMD16GX4M4B3600C18 4GB
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内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
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内存RAM
Kingston 9905584-016.A00LF 4GB
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内存RAM
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内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
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内存RAM