SK Hynix HMT325S6BFR8C-H9 2GB vs Micron Technology 16ATF1G64AZ-2G1B1 8GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Micron Technology 16ATF1G64AZ-2G1B1 8GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

Micron Technology 16ATF1G64AZ-2G1B1 8GB

需要考虑的原因
Micron Technology 16ATF1G64AZ-2G1B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 41

左右 -11% 更低的延时
更快的读取速度，GB/s

14.7 11.6

测试中的平均数值
更快的写入速度，GB/s

10.6 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 37
读取速度，GB/s

11.6 14.7
写入速度，GB/s

7.3 10.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1438 2592

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-2133C9-4GAB 4GB

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Smart Modular SF464128CK8I6GKSEG 4GB

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Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

Crucial Technology BL16G26C16U4B.16FE 16GB

Crucial Technology BL16G26C16U4B.16FE 16GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

G Skill Intl F4-4266C19-8GTRG 8GB

G Skill Intl F4-4266C19-8GTRG 8GB

Micron Technology 8KTF51264HZ-1G6D1 4GB

Micron Technology 8KTF51264HZ-1G6D1 4GB

Micron Technology 8KTF51264HZ-1G6J1 4GB

Micron Technology 8KTF51264HZ-1G6J1 4GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Transcend Information TS2GSH64V4B 16GB

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Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

Crucial Technology CT16G4DFD832A.C16FJ 16GB

Crucial Technology CT16G4DFD832A.C16FJ 16GB