SK Hynix HMT325S6BFR8C-H9 2GB vs Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

低于PassMark测试中的延时，ns

41 75

左右 45% 更低的延时
更快的写入速度，GB/s

7.3 7.1

测试中的平均数值

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

需要考虑的原因
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

报告一个错误

更快的读取速度，GB/s

14.9 11.6

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 75
读取速度，GB/s

11.6 14.9
写入速度，GB/s

7.3 7.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1438 1763

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PUSKILL DDR3 1600 8G 8GB

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Crucial Technology CT8G4DFS8266.C8FD1 8GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Teikon TMA41GU6AFR8N-TFSC 8GB

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Kingston 9905403-156.A00LF 2GB

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Samsung M471A1K43BB1-CRC 8GB

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Kingston KHYXPX-HYJ 8GB

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G Skill Intl F4-2133C15-16GFX 16GB

G Skill Intl F4-2133C15-16GFX 16GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Kingston KDK8NX-MIE 16GB

Kingston KDK8NX-MIE 16GB

Samsung M378A1K43EB2-CWE 8GB

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Crucial Technology CT16G4DFD8213.C16FAD 16GB

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Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Wilk Elektronik S.A. GR3200D464L22/16G 16GB

Wilk Elektronik S.A. GR3200D464L22/16G 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Kingston 9965596-019.B01G 4GB

Kingston 9965596-019.B01G 4GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

A-DATA Technology DDR4 2800 2OZ 4GB

A-DATA Technology DDR4 2800 2OZ 4GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905712-048.A00G 16GB

Kingston 9905712-048.A00G 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-4800C18-8GTRS 8GB

G Skill Intl F4-4800C18-8GTRS 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-3200C16-8GVKBN 8GB

G Skill Intl F4-3200C16-8GVKBN 8GB