SK Hynix HMT325S6BFR8C-H9 2GB vs Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

低于PassMark测试中的延时，ns

41 74

左右 45% 更低的延时

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

需要考虑的原因
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

报告一个错误

更快的读取速度，GB/s

13.6 11.6

测试中的平均数值
更快的写入速度，GB/s

7.7 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 74
读取速度，GB/s

11.6 13.6
写入速度，GB/s

7.3 7.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1438 1616

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

Crucial Technology BLS8G4D240FSC.M16FAD 8GB

Crucial Technology BLS8G4D240FSC.M16FAD 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-3000C15-4GTZ 4GB

G Skill Intl F4-3000C15-4GTZ 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMK32GX4M4B4000C19 8GB

Corsair CMK32GX4M4B4000C19 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-3200C14-16GVR 16GB

G Skill Intl F4-3200C14-16GVR 16GB

Corsair CM3X1G1600C9DHX 1GB

Corsair CM3X1G1600C9DHX 1GB

Super Talent F24EA8GS 8GB

Super Talent F24EA8GS 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Corsair CMWS8GL3200K16W4E 8GB

Corsair CMWS8GL3200K16W4E 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

Crucial Technology CB8GU2400.C8ET 8GB

Crucial Technology CB8GU2400.C8ET 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Crucial Technology BLS4G4S240FSD.M8FADM 4GB

Crucial Technology BLS4G4S240FSD.M8FADM 4GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Corsair CMK32GX4M4B4000C19 8GB

Corsair CMK32GX4M4B4000C19 8GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Samsung V-GeN D4S8GL32A8TL 8GB

Samsung V-GeN D4S8GL32A8TL 8GB