SK Hynix HMT325S6CFR8C-H9 2GB vs Micron Technology 18ASF1G72PZ-2G3B1 8GB

总分

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

总分

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

差异规格评论

差异

SK Hynix HMT325S6CFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6CFR8C-H9 2GB

报告一个错误

低于PassMark测试中的延时，ns

43 45

左右 4% 更低的延时
更高的内存带宽，mbps

10600 1900

左右 5.58% 更高的带宽

Micron Technology 18ASF1G72PZ-2G3B1 8GB

需要考虑的原因
Micron Technology 18ASF1G72PZ-2G3B1 8GB

报告一个错误

更快的读取速度，GB/s

11.7 10.7

测试中的平均数值
更快的写入速度，GB/s

8.4 6.8

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMT325S6CFR8C-H9 2GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 45
读取速度，GB/s

10.7 11.7
写入速度，GB/s

6.8 8.4
内存带宽，mbps

10600 1900

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-1900, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz no data
排名PassMark (越多越好)

1314 2387

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-2933C14-16GTZRX 16GB

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Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

G Skill Intl F4-3333C16-8GTZB 8GB

G Skill Intl F4-3333C16-8GTZB 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Micron Technology 18ASF2G72AZ-2G3B1 16GB

Micron Technology 18ASF2G72AZ-2G3B1 16GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology CT8G4DFS632A.M4FB 8GB

Crucial Technology CT8G4DFS632A.M4FB 8GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

G Skill Intl F4-4000C18-32GTZN 32GB

G Skill Intl F4-4000C18-32GTZN 32GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

G Skill Intl F4-4500C19-8GTZKKE 8GB

G Skill Intl F4-4500C19-8GTZKKE 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Kingmax Semiconductor GLLF62F-DA---------- 4GB

Kingmax Semiconductor GLLF62F-DA---------- 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-3200C14-16GVK 16GB

G Skill Intl F4-3200C14-16GVK 16GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Hyundai Inc AR36C18S8K2HU416R 8GB

Hyundai Inc AR36C18S8K2HU416R 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Crucial Technology BLS8G4D26BFSE.16FE 8GB

Crucial Technology BLS8G4D26BFSE.16FE 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Kingston 9905702-071.A00G 8GB

Kingston 9905702-071.A00G 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

A-DATA Technology DDR4 3333 2OZ 4GB

A-DATA Technology DDR4 3333 2OZ 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

SK Hynix HMT451U6BFR8A-PB 4GB

SK Hynix HMT451U6BFR8A-PB 4GB