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SK Hynix HMT325U6CFR8C-PB 2GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
比较
SK Hynix HMT325U6CFR8C-PB 2GB vs Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
总分
SK Hynix HMT325U6CFR8C-PB 2GB
总分
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB
报告一个错误
需要考虑的原因
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
报告一个错误
低于PassMark测试中的延时,ns
35
43
左右 -23% 更低的延时
更快的读取速度,GB/s
16.8
12.3
测试中的平均数值
更快的写入速度,GB/s
13.7
8.1
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT325U6CFR8C-PB 2GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
43
35
读取速度,GB/s
12.3
16.8
写入速度,GB/s
8.1
13.7
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1706
3306
SK Hynix HMT325U6CFR8C-PB 2GB RAM的比较
OCZ OCZ3G1600LV2G 2GB
OCZ OCZ3G16002G 2GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingmax Semiconductor KLDD48F-A8KB5 1GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9905630-051.A00G 16GB
Samsung M393B1K70QB0-CK0 8GB
Kingston XCCT36-MIE 16GB
Samsung M393A1G40DB0-CPB 8GB
Samsung 9905599-020.A00G 16GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology BLS16G4D26BFSB.16FD 16GB
Peak Electronics 256X64M-67E 2GB
Corsair CMK8GX4M2A2400C16 4GB
PUSKILL DDR3 1600 8G 8GB
Corsair CMW64GX4M4D3600C18 16GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3866C18-8GTZSW 8GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology CT8G4DFRA266.C8FB 8GB
Kingston KVR533D2N4 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
Samsung M471B5173DB0-YK0 4GB
Crucial Technology BL16G26C16S4B.16FD 16GB
Kingston 9905403-134.A00LF 2GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Patriot Memory (PDP Systems) PSD48G213381 8GB
Kingston 99U5474-010.A00LF 2GB
A-DATA Technology DDR4 4133 8GB
报告一个错误
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Bug description
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