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SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology CT51264BD160B.C16F 4GB

SK Hynix HMT325U6CFR8C-PB 2GB vs Crucial Technology CT51264BD160B.C16F 4GB

总分
star star star star star
SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分
star star star star star
Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

差异 规格 评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB 需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB
报告一个错误
Crucial Technology CT51264BD160B.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 43
    左右 -5% 更低的延时
  • 更快的读取速度，GB/s
    13.9 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.7 left arrow 8.1
    测试中的平均数值

规格

完整的技术规格清单
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology CT51264BD160B.C16F 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    43 left arrow 41
  • 读取速度，GB/s
    12.3 left arrow 13.9
  • 写入速度，GB/s
    8.1 left arrow 9.7
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1706 left arrow 2366

SK Hynix HMT325U6CFR8C-PB 2GB RAM的比较

OCZ OCZ3G1600LV2G 2GB
OCZ OCZ3G16002G 2GB

Crucial Technology CT51264BD160B.C16F 4GB RAM的比较

Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
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内存RAM
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内存RAM
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