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SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-3200C14-16GTZKW 16GB

SK Hynix HMT325U6CFR8C-PB 2GB vs G Skill Intl F4-3200C14-16GTZKW 16GB

总分
star star star star star
SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分
star star star star star
G Skill Intl F4-3200C14-16GTZKW 16GB

G Skill Intl F4-3200C14-16GTZKW 16GB

差异 规格 评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB 需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB
报告一个错误
G Skill Intl F4-3200C14-16GTZKW 16GB 需要考虑的原因
G Skill Intl F4-3200C14-16GTZKW 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 43
    左右 -65% 更低的延时
  • 更快的读取速度，GB/s
    19.7 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.5 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-3200C14-16GTZKW 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 26
  • 读取速度，GB/s
    12.3 left arrow 19.7
  • 写入速度，GB/s
    8.1 left arrow 15.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1706 left arrow 3832

SK Hynix HMT325U6CFR8C-PB 2GB RAM的比较

OCZ OCZ3G1600LV2G 2GB
OCZ OCZ3G16002G 2GB

G Skill Intl F4-3200C14-16GTZKW 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
G Skill Intl F4-2666C18-8GTZR 8GB
G Skill Intl F4-2666C18-8GTZR 8GB
内存RAM
SK Hynix HMT425S6AFR6A-PB 2GB
SK Hynix HMT425S6AFR6A-PB 2GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
SK Hynix HMA451U7AFR8N-TF 4GB
SK Hynix HMA451U7AFR8N-TF 4GB
内存RAM
Samsung M393A2G40EB1-CRC 16GB
Samsung M393A2G40EB1-CRC 16GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-3200C14-16GTZKW 16GB
G Skill Intl F4-3200C14-16GTZKW 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
内存RAM
Crucial Technology 8G4US2400.M8B1 8GB
Crucial Technology 8G4US2400.M8B1 8GB
Samsung M378A1G43EB1-CPB 8GB
Samsung M378A1G43EB1-CPB 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMK32GX4M4D3600C18 8GB
Corsair CMK32GX4M4D3600C18 8GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Corsair CMK16GX4M4B3200C16 4GB
Corsair CMK16GX4M4B3200C16 4GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology BLS8G4D240FSB.16FBD? 8GB
Crucial Technology BLS8G4D240FSB.16FBD? 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston 9965589-013.A00G 8GB
Kingston 9965589-013.A00G 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Kingston HP24D4U7S8MBP-4 4GB
Kingston HP24D4U7S8MBP-4 4GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Avant Technology J642GU42J5213NF 16GB
Avant Technology J642GU42J5213NF 16GB
内存RAM