SK Hynix HMT325U6CFR8C-PB 2GB vs Samsung 18ASF1G72PDZ-2G1B1 16GB

总分

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分

Samsung 18ASF1G72PDZ-2G1B1 16GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

差异规格评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB

报告一个错误

更快的读取速度，GB/s

12.3 9.8

测试中的平均数值

Samsung 18ASF1G72PDZ-2G1B1 16GB

需要考虑的原因
Samsung 18ASF1G72PDZ-2G1B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 43

左右 -34% 更低的延时
更快的写入速度，GB/s

8.6 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325U6CFR8C-PB 2GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 32
读取速度，GB/s

12.3 9.8
写入速度，GB/s

8.1 8.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1706 2271

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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