SK Hynix HMT351R7EFR8C-RD 4GB vs Golden Empire CL16-16-16 D4-3000 4GB

总分

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

总分

Golden Empire CL16-16-16 D4-3000 4GB

Golden Empire CL16-16-16 D4-3000 4GB

差异规格评论

差异

SK Hynix HMT351R7EFR8C-RD 4GB

需要考虑的原因
SK Hynix HMT351R7EFR8C-RD 4GB

报告一个错误

Golden Empire CL16-16-16 D4-3000 4GB

需要考虑的原因
Golden Empire CL16-16-16 D4-3000 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 37

左右 -28% 更低的延时
更快的读取速度，GB/s

16 9.8

测试中的平均数值
更快的写入速度，GB/s

12.6 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 14900

左右 1.29 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT351R7EFR8C-RD 4GB

Golden Empire CL16-16-16 D4-3000 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 29
读取速度，GB/s

9.8 16.0
写入速度，GB/s

7.2 12.6
内存带宽，mbps

14900 19200

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-19200, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

9-10-9-28 / 1866 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2065 3291

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMW32GX4M2E3200C16 16GB

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Samsung M393A1G40DB0-CPB 8GB

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A-DATA Technology DOVF1B163G2G 2GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Micron Technology 18ASF1G72PDZ-2G1A1 8GB

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Kingston CBD24D4U7S8MA-8 8GB