SK Hynix HMT351S6CFR8C-PB 4GB vs Micron Technology 16HTS51264HY-800A1 4GB

总分

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

总分

Micron Technology 16HTS51264HY-800A1 4GB

Micron Technology 16HTS51264HY-800A1 4GB

差异规格评论

差异

SK Hynix HMT351S6CFR8C-PB 4GB

需要考虑的原因
SK Hynix HMT351S6CFR8C-PB 4GB

报告一个错误

低于PassMark测试中的延时，ns

46 65

左右 29% 更低的延时
更快的写入速度，GB/s

8.0 1,728.8

测试中的平均数值
更高的内存带宽，mbps

12800 6400

左右 2% 更高的带宽

Micron Technology 16HTS51264HY-800A1 4GB

需要考虑的原因
Micron Technology 16HTS51264HY-800A1 4GB

报告一个错误

更快的读取速度，GB/s

4 11.6

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMT351S6CFR8C-PB 4GB

Micron Technology 16HTS51264HY-800A1 4GB

主要特点

存储器类型

DDR3 DDR2
PassMark中的延时，ns

46 65
读取速度，GB/s

11.6 4,268.2
写入速度，GB/s

8.0 1,728.8
内存带宽，mbps

12800 6400

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

9-9-9-24 / 1600 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

1854 728

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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