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SK Hynix HMT351S6CFR8C-PB 4GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
比较
SK Hynix HMT351S6CFR8C-PB 4GB vs Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
总分
SK Hynix HMT351S6CFR8C-PB 4GB
总分
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT351S6CFR8C-PB 4GB
报告一个错误
低于PassMark测试中的延时,ns
46
49
左右 6% 更低的延时
更快的读取速度,GB/s
11.6
10.7
测试中的平均数值
需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
报告一个错误
更快的写入速度,GB/s
8.6
8.0
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT351S6CFR8C-PB 4GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
46
49
读取速度,GB/s
11.6
10.7
写入速度,GB/s
8.0
8.6
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1854
2504
SK Hynix HMT351S6CFR8C-PB 4GB RAM的比较
SK Hynix HMT451S6AFR8A-PB 4GB
G Skill Intl F4-2133C15-8GVR 8GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Mushkin 991586 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
Samsung M3 78T2863EHS-CF7 1GB
Kingston XRMWRN-MIE2 16GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3600C17-16GTZR 16GB
Kingston 9905403-447.A00LF 4GB
Corsair CMWX8GD3000C15W4 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Super Talent F26UB16GH 16GB
Kingston KP4T2F-PSB 4GB
Hyundai Inc AR36C18S8K2HU416R 8GB
Team Group Inc. Team-Elite-1333 4GB
SK Hynix HMA81GR7AFR8N-VK 8GB
A-DATA Technology DQKD1A08 1GB
Kingston 9905625-098.A00G 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BLM8G44C19U4BL.M8FE1 8GB
Kingston 99U5471-056.A00LF 8GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Samsung M3 78T5663RZ3-CF7 2GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 36ASF2G72LZ-2G1A1 16GB
Kingston 9905469-124.A00LF 4GB
Crucial Technology BLS8G4D30BESBK.8FD 8GB
Kingston KHX318C10FR/8G 8GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
报告一个错误
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Bug description
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