RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
SK Hynix HMT351S6CFR8C-PB 4GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB

SK Hynix HMT351S6CFR8C-PB 4GB vs Wilk Elektronik S.A. IRH2666D464L19/16G 16GB

总分
star star star star star
SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

总分
star star star star star
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB

Wilk Elektronik S.A. IRH2666D464L19/16G 16GB

差异 规格 评论

差异

SK Hynix HMT351S6CFR8C-PB 4GB 需要考虑的原因
SK Hynix HMT351S6CFR8C-PB 4GB
报告一个错误
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB 需要考虑的原因
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 46
    左右 -53% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 11.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.6 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT351S6CFR8C-PB 4GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 30
  • 读取速度，GB/s
    11.6 left arrow 16.7
  • 写入速度，GB/s
    8.0 left arrow 13.6
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1854 left arrow 3447

SK Hynix HMT351S6CFR8C-PB 4GB RAM的比较

SK Hynix HMT451S6AFR8A-PB 4GB
G Skill Intl F4-2133C15-8GVR 8GB

Wilk Elektronik S.A. IRH2666D464L19/16G 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
SK Hynix HMA81GS6CJR8N-XN 8GB
SK Hynix HMA81GS6CJR8N-XN 8GB
内存RAM
SK Hynix HMT41GS6AFR8A-PB 8GB
SK Hynix HMT41GS6AFR8A-PB 8GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Kingston 9905625-076.A00G 8GB
Kingston 9905625-076.A00G 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology BL16G26C16U4B.16FE 16GB
Crucial Technology BL16G26C16U4B.16FE 16GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Gloway International (HK) STK4U2400D17042C 4GB
Gloway International (HK) STK4U2400D17042C 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
V-Color Technology Inc. TL48G32S8KGRGB16 8GB
V-Color Technology Inc. TL48G32S8KGRGB16 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M471A1G44BB0-CWE 8GB
Samsung M471A1G44BB0-CWE 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA82GR7AFR8N-VK 16GB
SK Hynix HMA82GR7AFR8N-VK 16GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMW32GX4M4Z2933C16 8GB
Corsair CMW32GX4M4Z2933C16 8GB
内存RAM