SK Hynix HMT351U6EFR8C-PB 4GB vs Samsung M378B5173QH0-CK0 4GB

总分

SK Hynix HMT351U6EFR8C-PB 4GB

SK Hynix HMT351U6EFR8C-PB 4GB

总分

Samsung M378B5173QH0-CK0 4GB

Samsung M378B5173QH0-CK0 4GB

差异规格评论

差异

SK Hynix HMT351U6EFR8C-PB 4GB

需要考虑的原因
SK Hynix HMT351U6EFR8C-PB 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 43

左右 2% 更低的延时
更快的写入速度，GB/s

8.7 8.2

测试中的平均数值

Samsung M378B5173QH0-CK0 4GB

需要考虑的原因
Samsung M378B5173QH0-CK0 4GB

报告一个错误

更快的读取速度，GB/s

13.9 13.6

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMT351U6EFR8C-PB 4GB

Samsung M378B5173QH0-CK0 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

42 43
读取速度，GB/s

13.6 13.9
写入速度，GB/s

8.7 8.2
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2143 2216

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston HX424C15PB/4 4GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Corsair CMW16GX4M1Z3200C16 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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