RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
SK Hynix HMT41GS6BFR8A-PB 8GB
Samsung M378A2K43CB1-CRC 16GB

SK Hynix HMT41GS6BFR8A-PB 8GB vs Samsung M378A2K43CB1-CRC 16GB

总分
star star star star star
SK Hynix HMT41GS6BFR8A-PB 8GB

SK Hynix HMT41GS6BFR8A-PB 8GB

总分
star star star star star
Samsung M378A2K43CB1-CRC 16GB

Samsung M378A2K43CB1-CRC 16GB

差异 规格 评论

差异

SK Hynix HMT41GS6BFR8A-PB 8GB 需要考虑的原因
SK Hynix HMT41GS6BFR8A-PB 8GB
报告一个错误
Samsung M378A2K43CB1-CRC 16GB 需要考虑的原因
Samsung M378A2K43CB1-CRC 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 46
    左右 -44% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 12.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.6 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT41GS6BFR8A-PB 8GB
Samsung M378A2K43CB1-CRC 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 32
  • 读取速度，GB/s
    12.1 left arrow 15.6
  • 写入速度，GB/s
    8.0 left arrow 10.6
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2088 left arrow 2900

SK Hynix HMT41GS6BFR8A-PB 8GB RAM的比较

Ramaxel Technology RMT3170MN68F9F1600 4GB
A-DATA Technology AO1P32NC8W1-BD2SHC 8GB

Samsung M378A2K43CB1-CRC 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Patriot Memory (PDP Systems) PSD416G32002 16GB
Patriot Memory (PDP Systems) PSD416G32002 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Apacer Technology 78.CAGPP.ARW0B 8GB
Apacer Technology 78.CAGPP.ARW0B 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston 9965640-016.A00G 32GB
Kingston 9965640-016.A00G 32GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-3000C15-4GVR 4GB
G Skill Intl F4-3000C15-4GVR 4GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
内存RAM
Kingston 99U5474-022.A00LF 2GB
Kingston 99U5474-022.A00LF 2GB
G Skill Intl F4-2400C17-8GFT 8GB
G Skill Intl F4-2400C17-8GFT 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Patriot Memory (PDP Systems) PSD416G26662S 16GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
G Skill Intl F4-3600C16-8GVKC 8GB
G Skill Intl F4-3600C16-8GVKC 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-4800C18-8GTRG 8GB
G Skill Intl F4-4800C18-8GTRG 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Crucial Technology BLS16G4D32AESB.M16FE 16GB
Crucial Technology BLS16G4D32AESB.M16FE 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston XRMWRN-MIE2 16GB
Kingston XRMWRN-MIE2 16GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Corsair CMR64GX4M4C3466C16 16GB
Corsair CMR64GX4M4C3466C16 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingston KHX2666C15/8G 8GB
Kingston KHX2666C15/8G 8GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Corsair CMK16GX4M1B3000C15 16GB
Corsair CMK16GX4M1B3000C15 16GB
内存RAM