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SK Hynix HMT425S6AFR6A-PB 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
比较
SK Hynix HMT425S6AFR6A-PB 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
总分
SK Hynix HMT425S6AFR6A-PB 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT425S6AFR6A-PB 2GB
报告一个错误
低于PassMark测试中的延时,ns
28
37
左右 24% 更低的延时
更快的读取速度,GB/s
12.6
10.4
测试中的平均数值
更快的写入速度,GB/s
8.2
7.8
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
报告一个错误
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT425S6AFR6A-PB 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
37
读取速度,GB/s
12.6
10.4
写入速度,GB/s
8.2
7.8
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1822
2213
SK Hynix HMT425S6AFR6A-PB 2GB RAM的比较
Crucial Technology CT51264BF160BJ.C8F 4GB
SK Hynix HMT325S6CFR8C-PB 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB RAM的比较
Samsung M393B1G70BH0-CK0 8GB
Samsung M471B5273DH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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SK Hynix HMT425S6CFR6A-PB 2GB
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报告一个错误
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Bug description
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