Micron Technology 16JSF25664HZ-1G1F1 2GB vs G Skill Intl F4-3200C14-8GVR 8GB

总分

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分

G Skill Intl F4-3200C14-8GVR 8GB

G Skill Intl F4-3200C14-8GVR 8GB

差异规格评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB

需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB

报告一个错误

G Skill Intl F4-3200C14-8GVR 8GB

需要考虑的原因
G Skill Intl F4-3200C14-8GVR 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 29

左右 -26% 更低的延时
更快的读取速度，GB/s

20.6 10.5

测试中的平均数值
更快的写入速度，GB/s

16.2 7.1

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JSF25664HZ-1G1F1 2GB

G Skill Intl F4-3200C14-8GVR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 23
读取速度，GB/s

10.5 20.6
写入速度，GB/s

7.1 16.2
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1425 3819

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KVR533D2N4 512MB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Hexon Technology Pte Ltd HEXON 1GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Kingmax Semiconductor GZOH23F-18---------- 16GB

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Kingston 99U5474-028.A00LF 4GB

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Micron Technology 16ATF2G64HZ-2G1A1 16GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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Apacer Technology GD2.111881.002 4GB

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Kingston 99U5403-050.A00LF 4GB

Kingston 99U5403-050.A00LF 4GB

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Crucial Technology BL32G32C16S4B.16FB 32GB