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SK Hynix HMT425S6AFR6A-PB 2GB
Ramaxel Technology RMT3170EF68F9W1600 4GB

SK Hynix HMT425S6AFR6A-PB 2GB vs Ramaxel Technology RMT3170EF68F9W1600 4GB

总分
star star star star star
SK Hynix HMT425S6AFR6A-PB 2GB

SK Hynix HMT425S6AFR6A-PB 2GB

总分
star star star star star
Ramaxel Technology RMT3170EF68F9W1600 4GB

Ramaxel Technology RMT3170EF68F9W1600 4GB

差异 规格 评论

差异

SK Hynix HMT425S6AFR6A-PB 2GB 需要考虑的原因
SK Hynix HMT425S6AFR6A-PB 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 40
    左右 30% 更低的延时
  • 更快的读取速度，GB/s
    12.6 left arrow 10.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.2 left arrow 6.4
    测试中的平均数值
Ramaxel Technology RMT3170EF68F9W1600 4GB 需要考虑的原因
Ramaxel Technology RMT3170EF68F9W1600 4GB
报告一个错误

规格

完整的技术规格清单
SK Hynix HMT425S6AFR6A-PB 2GB
Ramaxel Technology RMT3170EF68F9W1600 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    28 left arrow 40
  • 读取速度，GB/s
    12.6 left arrow 10.8
  • 写入速度，GB/s
    8.2 left arrow 6.4
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1822 left arrow 1668

SK Hynix HMT425S6AFR6A-PB 2GB RAM的比较

Crucial Technology CT51264BF160BJ.C8F 4GB
SK Hynix HMT325S6CFR8C-PB 2GB

Ramaxel Technology RMT3170EF68F9W1600 4GB RAM的比较

Ramaxel Technology RMT3170MN68F9F1600 4GB
Chun Well Technology Holding Limited D4U0836144B 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
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Crucial Technology BLT8G4D30AETA.K16FD 8GB
Crucial Technology BLT8G4D30AETA.K16FD 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology CT16G4SFS832A.C8FB 16GB
Crucial Technology CT16G4SFS832A.C8FB 16GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Micron Technology 8ATF1G64AZ-2G6D1 8GB
Micron Technology 8ATF1G64AZ-2G6D1 8GB
内存RAM
Samsung M3 78T5663EH3-CF7 2GB
Samsung M3 78T5663EH3-CF7 2GB
Mushkin MR[A/B]4U300JJJM16G 16GB
Mushkin MR[A/B]4U300JJJM16G 16GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Kingston KF3200C16D4/16GX 16GB
Kingston KF3200C16D4/16GX 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Crucial Technology BL32G32C16U4W.M16FB1 32GB
Crucial Technology BL32G32C16U4W.M16FB1 32GB
内存RAM
Crucial Technology CT16G4DFRA32A.C16FN 16GB
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Patriot Memory (PDP Systems) PSD416G320081 16GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Crucial Technology CT16G4SFD824A.M16FD1 16GB
Crucial Technology CT16G4SFD824A.M16FD1 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
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Golden Empire CL15-17-17 D4-2666 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
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SK Hynix HMA82GS7AFR8N-UH 16GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
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Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
内存RAM
Ramaxel Technology RMT1970ED48E8F1066 2GB
Ramaxel Technology RMT1970ED48E8F1066 2GB
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Crucial Technology CT4G4DFS8266.M8FG 4GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
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InnoDisk Corporation M4S0-8GSSOCRG 8GB
内存RAM