RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
SK Hynix HMT425S6CFR6A-PB 2GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB

SK Hynix HMT425S6CFR6A-PB 2GB vs Wilk Elektronik S.A. GR2400D464L17S/4G 4GB

总分
star star star star star
SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

总分
star star star star star
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB

Wilk Elektronik S.A. GR2400D464L17S/4G 4GB

差异 规格 评论

差异

SK Hynix HMT425S6CFR6A-PB 2GB 需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB
报告一个错误
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB 需要考虑的原因
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 41
    左右 -86% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 10.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT425S6CFR6A-PB 2GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 22
  • 读取速度，GB/s
    10.1 left arrow 17.4
  • 写入速度，GB/s
    7.1 left arrow 12.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1484 left arrow 2801

SK Hynix HMT425S6CFR6A-PB 2GB RAM的比较

Ramaxel Technology RMT3170MP68F9F1600 4GB
Nanya Technology NT2GC64B88B0NS-CG 2GB

Wilk Elektronik S.A. GR2400D464L17S/4G 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4133C19-8GTZRF 8GB
G Skill Intl F4-4133C19-8GTZRF 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston 9905734-082.A00G 16GB
Kingston 9905734-082.A00G 16GB
内存RAM
Kingston HP32D4U2S8MR-8 8GB
Kingston HP32D4U2S8MR-8 8GB
Corsair CMK32GX5M2B5200C40 16GB
Corsair CMK32GX5M2B5200C40 16GB
内存RAM
Kingston ACR16D3LS1KNG/4G 4GB
Kingston ACR16D3LS1KNG/4G 4GB
Kingston 9905678-121.A00G 8GB
Kingston 9905678-121.A00G 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M2B3000C15 8GB
Corsair CMK16GX4M2B3000C15 8GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CM4B8G7L2666A16K2-O 8GB
Corsair CM4B8G7L2666A16K2-O 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Kingston HP26D4U6S8ME-8X 8GB
Kingston HP26D4U6S8ME-8X 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Essencore Limited IM48GU88A30-FGGHMB 8GB
Essencore Limited IM48GU88A30-FGGHMB 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMW16GX4M2C3466C16 8GB
Corsair CMW16GX4M2C3466C16 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-4000C18-32GTRS 32GB
G Skill Intl F4-4000C18-32GTRS 32GB
内存RAM