SK Hynix HMT42GR7AFR4A-PB 16GB vs Micron Technology 16ATF2G64HZ-2G3B2 16GB

总分

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

总分

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

差异规格评论

差异

SK Hynix HMT42GR7AFR4A-PB 16GB

需要考虑的原因
SK Hynix HMT42GR7AFR4A-PB 16GB

报告一个错误

Micron Technology 16ATF2G64HZ-2G3B2 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3B2 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 42

左右 -75% 更低的延时
更快的读取速度，GB/s

16.6 11.7

测试中的平均数值
更快的写入速度，GB/s

12.6 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT42GR7AFR4A-PB 16GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 24
读取速度，GB/s

11.7 16.6
写入速度，GB/s

8.0 12.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2535 2969

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 18ASF1G72PZ-2G1B1 8GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

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Samsung M378B5673FH0-CH9 2GB

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Crucial Technology CT4G4DFS8213.C8FAR11 4GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

Samsung 16KTF1G64AZ-1G9P1 8GB

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G Skill Intl F3-2133C9-4GAB 4GB

Wilk Elektronik S.A. GY2400D464L15S/8G 8GB

Wilk Elektronik S.A. GY2400D464L15S/8G 8GB