SK Hynix HMT42GR7AFR4C-RD 16GB vs Samsung M474A4G43MB1-CTD 32GB

总分

SK Hynix HMT42GR7AFR4C-RD 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

总分

Samsung M474A4G43MB1-CTD 32GB

Samsung M474A4G43MB1-CTD 32GB

差异规格评论

差异

SK Hynix HMT42GR7AFR4C-RD 16GB

需要考虑的原因
SK Hynix HMT42GR7AFR4C-RD 16GB

报告一个错误

Samsung M474A4G43MB1-CTD 32GB

需要考虑的原因
Samsung M474A4G43MB1-CTD 32GB

报告一个错误

低于PassMark测试中的延时，ns

33 52

左右 -58% 更低的延时
更快的读取速度，GB/s

19.7 9.9

测试中的平均数值
更快的写入速度，GB/s

14.8 8.2

测试中的平均数值
更高的内存带宽，mbps

21300 14900

左右 1.43 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT42GR7AFR4C-RD 16GB

Samsung M474A4G43MB1-CTD 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 33
读取速度，GB/s

9.9 19.7
写入速度，GB/s

8.2 14.8
内存带宽，mbps

14900 21300

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-10-9-28 / 1866 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2285 3671

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF1G64HZ-2G6E1 8GB

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G Skill Intl F4-3200C15-16GTZ 16GB

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Kingston 9905469-124.A00LF 4GB

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G Skill Intl F4-4000C16-16GVK 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology BL8G36C16U4BL.M8FE1 8GB

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Crucial Technology CT16G4SFRA32A.C16FJ 16GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

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Qimonda 72T128420EFA3SB2 1GB

Kingston KHX2133C14/16G 16GB

Kingston KHX2133C14/16G 16GB