SK Hynix HMT42GR7AFR4C-RD 16GB vs SK Hynix GKE800UD102408-2400 8GB

总分

SK Hynix HMT42GR7AFR4C-RD 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

总分

SK Hynix GKE800UD102408-2400 8GB

SK Hynix GKE800UD102408-2400 8GB

差异规格评论

差异

SK Hynix HMT42GR7AFR4C-RD 16GB

需要考虑的原因
SK Hynix HMT42GR7AFR4C-RD 16GB

报告一个错误

SK Hynix GKE800UD102408-2400 8GB

需要考虑的原因
SK Hynix GKE800UD102408-2400 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 52

左右 -44% 更低的延时
更快的读取速度，GB/s

14.4 9.9

测试中的平均数值
更快的写入速度，GB/s

10.4 8.2

测试中的平均数值
更高的内存带宽，mbps

19200 14900

左右 1.29 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT42GR7AFR4C-RD 16GB

SK Hynix GKE800UD102408-2400 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 36
读取速度，GB/s

9.9 14.4
写入速度，GB/s

8.2 10.4
内存带宽，mbps

14900 19200

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

9-10-9-28 / 1866 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2285 2489

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT25664AA800.M16FG 2GB

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Crucial Technology BLS8G4D30AESEK.M8FE 8GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Shenzhen Technology Co Ltd 8GB

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Mushkin MR[A/B]4U300JJJM16G 16GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Kingston 9905713-028.A00G 8GB

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Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Corsair CMH32GX4M4E3200C16 8GB

Corsair CMH32GX4M4E3200C16 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Kingston LV36D4U1S8HD-8XR 8GB

Kingston LV36D4U1S8HD-8XR 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

A Force Manufacturing Ltd. UD-01G64V2133P 8GB

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