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SK Hynix HMT451S6BFR8A-PB 4GB
Apacer Technology 78.D2GFH.4030B 16GB

SK Hynix HMT451S6BFR8A-PB 4GB vs Apacer Technology 78.D2GFH.4030B 16GB

总分
star star star star star
SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分
star star star star star
Apacer Technology 78.D2GFH.4030B 16GB

Apacer Technology 78.D2GFH.4030B 16GB

差异 规格 评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB 需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB
报告一个错误
Apacer Technology 78.D2GFH.4030B 16GB 需要考虑的原因
Apacer Technology 78.D2GFH.4030B 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 44
    左右 -76% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT451S6BFR8A-PB 4GB
Apacer Technology 78.D2GFH.4030B 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 25
  • 读取速度，GB/s
    12.3 left arrow 17.7
  • 写入速度，GB/s
    7.8 left arrow 13.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1977 left arrow 3138

SK Hynix HMT451S6BFR8A-PB 4GB RAM的比较

Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB

Apacer Technology 78.D2GFH.4030B 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Apacer Technology 78.D2GFH.4030B 16GB
Apacer Technology 78.D2GFH.4030B 16GB
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AMD AE34G1601U1 4GB
Crucial Technology BL8G36C16U4WL.M8FE1 8GB
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内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3466C16-8GTZR 8GB
G Skill Intl F4-3466C16-8GTZR 8GB
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Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
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内存RAM
Samsung M471B5173QH0-YK0 4GB
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内存RAM
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Crucial Technology CT25664AA800.M16FM 2GB
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Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
内存RAM
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Corsair CMD16GX4M2A2400C14 8GB
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Samsung M3 78T2953EZ3-CF7 1GB
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