SK Hynix HMT451S6BFR8A-PB 4GB vs Corsair CMK32GX4M4E4133C19 8GB

总分

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分

Corsair CMK32GX4M4E4133C19 8GB

Corsair CMK32GX4M4E4133C19 8GB

差异规格评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB

需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB

报告一个错误

Corsair CMK32GX4M4E4133C19 8GB

需要考虑的原因
Corsair CMK32GX4M4E4133C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 44

左右 -100% 更低的延时
更快的读取速度，GB/s

19.1 12.3

测试中的平均数值
更快的写入速度，GB/s

14.7 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT451S6BFR8A-PB 4GB

Corsair CMK32GX4M4E4133C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 22
读取速度，GB/s

12.3 19.1
写入速度，GB/s

7.8 14.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1977 3509

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Wilk Elektronik S.A. GY2666D464L16/8G 8GB

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Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Samsung M471A5244CB0-CTD 4GB

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Kingston 9905403-437.A01LF 4GB

Essencore Limited KD4AGU880-36A180U 16GB

Essencore Limited KD4AGU880-36A180U 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Elpida EBJ40EG8BFWB-JS-F 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Kingston LV32D4U2S8ME-16X 16GB

Kingston LV32D4U2S8ME-16X 16GB