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SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
比较
SK Hynix HMT451S6BFR8A-PB 4GB vs Crucial Technology BLE4G4D26AFEA.8FAD 4GB
总分
SK Hynix HMT451S6BFR8A-PB 4GB
总分
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB
报告一个错误
需要考虑的原因
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
报告一个错误
低于PassMark测试中的延时,ns
35
44
左右 -26% 更低的延时
更快的读取速度,GB/s
17
12.3
测试中的平均数值
更快的写入速度,GB/s
12.4
7.8
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
44
35
读取速度,GB/s
12.3
17.0
写入速度,GB/s
7.8
12.4
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1977
2982
SK Hynix HMT451S6BFR8A-PB 4GB RAM的比较
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BLE4G4D26AFEA.8FAD 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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SK Hynix HMT451S6BFR8A-PB 4GB
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Crucial Technology CT51264BA1339.C16F 4GB
A-DATA Technology AO2P26KC8T1-BPYS 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology BLS8G4D240FSBK.8FBD 8GB
Kingston ACR512X64D3S13C9G 4GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMW16GX4M2Z3600C18 8GB
Kingston 9905403-090.A01LF 4GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
Kingston 9965433-034.A00LF 4GB
Corsair CMK64GX4M8A2133C13 8GB
Kingston 9905584-016.A00LF 4GB
Apacer Technology 78.CAGMR.ARC0B 8GB
报告一个错误
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Bug description
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