SK Hynix HMT451S6BFR8A-PB 4GB vs Crucial Technology BLS8G4S240FSD.16FBD2 8GB

总分

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

差异规格评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB

需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB

报告一个错误

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

需要考虑的原因
Crucial Technology BLS8G4S240FSD.16FBD2 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 44

左右 -42% 更低的延时
更快的读取速度，GB/s

16.4 12.3

测试中的平均数值
更快的写入速度，GB/s

12.8 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT451S6BFR8A-PB 4GB

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 31
读取速度，GB/s

12.3 16.4
写入速度，GB/s

7.8 12.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1977 2928

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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SK Hynix HMAA4GS6AJR8N-VK 32GB

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Samsung M393B1K70CH0-CH9 8GB

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A-DATA Technology AO1P26KCST2-BWWS 16GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Micron Technology 36ASF4G72PZ-2G6H1 32GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Corsair CMU32GX4M2D3200C16 16GB

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Samsung M4 70T2953EZ3-CE6 1GB

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G Skill Intl F4-3000C16-8GTRG 8GB

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Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB

SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

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G Skill Intl F4-3300C16-16GTZ 16GB

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Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

V-Color Technology Inc. TL48G24S815RGB 8GB

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Kingston 99U5458-008.A00LF 4GB

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Corsair CM4X4GF3000C15K4 4GB

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Samsung DDR3 8GB 1600MHz 8GB

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Corsair CMWX8GD3000C15W4 8GB

Corsair CMWX8GD3000C15W4 8GB