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SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-3200C16-8GTZKO 8GB

SK Hynix HMT451S6BFR8A-PB 4GB vs G Skill Intl F4-3200C16-8GTZKO 8GB

总分
star star star star star
SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分
star star star star star
G Skill Intl F4-3200C16-8GTZKO 8GB

G Skill Intl F4-3200C16-8GTZKO 8GB

差异 规格 评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB 需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB
报告一个错误
G Skill Intl F4-3200C16-8GTZKO 8GB 需要考虑的原因
G Skill Intl F4-3200C16-8GTZKO 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 44
    左右 -47% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.1 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-3200C16-8GTZKO 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 30
  • 读取速度，GB/s
    12.3 left arrow 16.1
  • 写入速度，GB/s
    7.8 left arrow 12.1
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1977 left arrow 2882

SK Hynix HMT451S6BFR8A-PB 4GB RAM的比较

Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3200C16-8GTZKO 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905469-124.A00LF 4GB
Kingston 9905469-124.A00LF 4GB
G Skill Intl F4-3600C18-8GTZN 8GB
G Skill Intl F4-3600C18-8GTZN 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Smart Modular SMU4WEC8C1K0464FCG 8GB
Smart Modular SMU4WEC8C1K0464FCG 8GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Corsair CMR32GX4M4C3000C16 8GB
Corsair CMR32GX4M4C3000C16 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Kingston HX426C16FB2/8-SP 8GB
Kingston HX426C16FB2/8-SP 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Corsair CMH16GX4M2Z3200C16 8GB
Corsair CMH16GX4M2Z3200C16 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BLS16G4D240FSB.16FD 16GB
Crucial Technology BLS16G4D240FSB.16FD 16GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology BLE16G4D32AEEA.K16FB 16GB
Crucial Technology BLE16G4D32AEEA.K16FB 16GB
内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Kingston 9905624-045.A00G 8GB
Kingston 9905624-045.A00G 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Crucial Technology CT8G4DFRA266.M4FE 8GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Kingston KHX2400C15/16G 16GB
Kingston KHX2400C15/16G 16GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Patriot Memory (PDP Systems) 3600 C17 Series 4GB
Patriot Memory (PDP Systems) 3600 C17 Series 4GB
内存RAM