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SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-3300C16-4GRRD 4GB

SK Hynix HMT451S6BFR8A-PB 4GB vs G Skill Intl F4-3300C16-4GRRD 4GB

总分
star star star star star
SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分
star star star star star
G Skill Intl F4-3300C16-4GRRD 4GB

G Skill Intl F4-3300C16-4GRRD 4GB

差异 规格 评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB 需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB
报告一个错误
G Skill Intl F4-3300C16-4GRRD 4GB 需要考虑的原因
G Skill Intl F4-3300C16-4GRRD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 44
    左右 -52% 更低的延时
  • 更快的读取速度，GB/s
    13.9 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-3300C16-4GRRD 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 29
  • 读取速度，GB/s
    12.3 left arrow 13.9
  • 写入速度，GB/s
    7.8 left arrow 11.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1977 left arrow 2821

SK Hynix HMT451S6BFR8A-PB 4GB RAM的比较

Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3300C16-4GRRD 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston KHX2400C12D4/8GX 8GB
Kingston KHX2400C12D4/8GX 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Mushkin 99[2/7/4]204[F/T] 4GB
Mushkin 99[2/7/4]204[F/T] 4GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Samsung M378A1K43BB2-CRC 8GB
Samsung M378A1K43BB2-CRC 8GB
内存RAM
Smart Modular SH564128FH8N0QHSCG 4GB
Smart Modular SH564128FH8N0QHSCG 4GB
DSL Memory D4SS12081SH21A-A 4GB
DSL Memory D4SS12081SH21A-A 4GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3400C16-16GVK 16GB
G Skill Intl F4-3400C16-16GVK 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston 9905701-022.A00G 16GB
Kingston 9905701-022.A00G 16GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-3300C16-4GRRD 4GB
G Skill Intl F4-3300C16-4GRRD 4GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Smart Modular SF464128CKHI6DFSEG 4GB
Smart Modular SF464128CKHI6DFSEG 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLM16G40C18U4BL.M8FB 16GB
Crucial Technology BLM16G40C18U4BL.M8FB 16GB
内存RAM
TwinMOS 9DNPBNZB-TATP 4GB
TwinMOS 9DNPBNZB-TATP 4GB
G Skill Intl F4-2400C15-16GIS 16GB
G Skill Intl F4-2400C15-16GIS 16GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-3200C22-32GRS 32GB
G Skill Intl F4-3200C22-32GRS 32GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK8GX4M2B4000C19 4GB
Corsair CMK8GX4M2B4000C19 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Apacer Technology 78.D1GMM.AU10B 16GB
Apacer Technology 78.D1GMM.AU10B 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
A-DATA Technology AO2P26KC8T1-BPYS 8GB
A-DATA Technology AO2P26KC8T1-BPYS 8GB
内存RAM